参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current66 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time32 ns
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time112 ns
ImageSTMicroelectronics STW70N60DM2
Package / CaseTO-247-3
PackagingTube
BrandSTMicroelectronics
SubcategoryMOSFETs
Mounting StyleThrough Hole
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
ManufacturerSTMicroelectronics
Factory Pack Quantity600
Qg - Gate Charge121 nC
RoHS Details
MXHTS85412999
SeriesSTW70N60DM2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time10.4 ns
Unit Weight1.340411 oz
CNHTS8541290000
Pd - Power Dissipation446 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time67 ns