参数项参数值
参数项参数值
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max- 65 V
Continuous Collector Current- 100 mA
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min290
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTSSOP-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.035274 oz
Pd - Power Dissipation200 mW
ImageNexperia BCM856BS,115
Part # Aliases934062056115
BrandNexperia
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT COMPLEX DISCRETE S2022D/SOT45
Moisture Sensitivity Level1 (Unlimited)