参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO150 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current4 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
DC Collector/Base Gain hfe Min300
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
ImageDiodes Incorporated ZXTN25050DFHTA
RoHS Details
SeriesZXTN250
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Unit Weight0.001199 oz
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT NPN 50V HIGH GAIN
USHTS8541290095
Pd - Power Dissipation1.25 W