参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current26 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance170 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time46 ns
Length15.8 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge56 nC
Mounting StyleThrough Hole
Package / CaseTO-3P-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Factory Pack Quantity30
CNHTS8541290000
BrandIXYS
ManufacturerIXYS
SeriesIXTQ26P20
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET -26.0 Amps -200V 0.170 Rds
ImageIXYS IXTQ26P20P
Fall Time21 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.194007 oz
USHTS8541290095
Pd - Power Dissipation300 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time33 ns
Moisture Sensitivity Level1 (Unlimited)