参数项参数值
参数项参数值
Gain Bandwidth Product fT2 MHz
Collector- Base Voltage VCBO70 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current10 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length10.53 mm
Width4.83 mm
Height15.75 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1.1 V
DC Collector/Base Gain hfe Min20
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity50
PackagingTube
ImageON Semiconductor MJE2955TG
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541290000
RoHS Details
DescriptionBipolar Transistors - BJT 10A 60V 125W PNP
SeriesMJE2955T
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation75 W