参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2.3 V
MXHTS85412999
KRHTS8541299000
CNHTS8541210000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 175 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingTube
TARIC8541290000
RoHS Details
ImageSTMicroelectronics STGP20V60DF
SeriesSTGP20V60DF
BrandSTMicroelectronics
Unit Weight0.081130 oz
Product TypeIGBT Transistors
Factory Pack Quantity1000
Product CategoryIGBT Transistors
Continuous Collector Current at 25 C40 A
ManufacturerSTMicroelectronics
SubcategoryIGBTs
Pd - Power Dissipation167 W
DescriptionIGBT Transistors 600V 20A High Speed Trench Gate IGBT
USHTS8541290095