CSD25480F3

厂牌：TI(德州仪器)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049831892

描述：MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150

商品参数

参数项参数值

Forward Transconductance - Min8 S

CNHTS8541290000

Width0.64 mm

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Id - Continuous Drain Current1.7 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time9 ns

Height0.35 mm

MXHTS85412999

Length0.73 mm

Rds On - Drain-Source Resistance840 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time13 ns

KRHTS8541299000

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

Mounting StyleSMD/SMT

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Qg - Gate Charge700 pC

TARIC8541290000

ManufacturerTexas Instruments

Factory Pack Quantity3000

BrandTexas Instruments

RoHS Details

ImageTexas Instruments CSD25480F3

SeriesCSD25480F3

SubcategoryMOSFETs

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET

Channel ModeEnhancement

USHTS8541290095

Fall Time7 ns

Unit Weight0.000011 oz

Pd - Power Dissipation500 mW

TradenamePicoStar

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time5 ns