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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min3.6 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance500 MOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time11 ns
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge5 nC
KRHTS8541299000
Package / CaseSSOT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541210000
CAHTS8541290000
Channel ModeEnhancement
Fall Time4 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.001270 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDC3601N
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDC3601N
Pd - Power Dissipation960 mW
Product CategoryMOSFET
Part # AliasesFDC3601N_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET Dual N-Ch 100V Spec Power Trench
TradenamePowerTrench
Number of Channels2 Channel
Rise Time4 ns
TypeMOSFET