SI7454DDP-T1-GE3

SI7454DDP-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049840715

描述：Single N-Channel 100 V 33 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min19 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current21 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Height1.04 mm

Length6.15 mm

JPHTS8541290100

Typical Turn-On Delay Time10 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

Rds On - Drain-Source Resistance27 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time16 ns

RoHS Details

Package / CasePowerPAK-SO-8

Factory Pack Quantity3000

ImageVishay Semiconductors SI7454DDP-T1-GE3

PackagingMouseReel

PackagingReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

Width5.15 mm

BrandVishay Semiconductors

Mounting StyleSMD/SMT

TARIC8541290000

ManufacturerVishay

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8

Qg - Gate Charge19.5 nC

MXHTS85412999

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.017870 oz

Fall Time9 ns

CNHTS8541210000

Part # AliasesSI7454CDP-T1-GE3

Pd - Power Dissipation29.7 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time13 ns