参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time6.6 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.1 ns
Factory Pack Quantity2500
Package / CaseTO-252-3
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated DMN6040SK3-13
SubcategoryMOSFETs
Qg - Gate Charge22.4 nC
Product CategoryMOSFET
DescriptionMOSFET 60V N-CH MOSFET
Product TypeMOSFET
MXHTS85412999
SeriesDMN60
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
Fall Time4 ns
CNHTS8541290000
Pd - Power Dissipation42 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time8.1 ns