参数项参数值
参数项参数值
Gain Bandwidth Product fT145 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length4.5 mm
Width2.5 mm
Height1.5 mm
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-89-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2500
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DXT751-13
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT BIPOLAR PNP
SeriesDXT751
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210075
Pd - Power Dissipation1000 mW