CSD18510Q5B

CSD18510Q5B

厂牌：TI(德州仪器)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049853428

描述：MOSFET 40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min147 S

ConfigurationSingle

CNHTS8541290000

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Id - Continuous Drain Current200 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time8 ns

MXHTS85412999

Rds On - Drain-Source Resistance1.2 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time44 ns

Package / CaseVSON-CLIP-8

KRHTS8541299000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingReel

PackagingMouseReel

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Qg - Gate Charge153 nC

TARIC8541290000

ManufacturerTexas Instruments

Factory Pack Quantity2500

BrandTexas Instruments

RoHS Details

ImageTexas Instruments CSD18510Q5B

SeriesCSD18510Q5B

Product TypeMOSFET

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET

Channel ModeEnhancement

USHTS8541290095

Fall Time15 ns

Unit Weight0.004258 oz

TradenameNexFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time17 ns