参数项参数值
参数项参数值
Forward Transconductance - Min9.6 S
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current9 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Height20.15 mm
Length15.75 mm
Typical Turn-On Delay Time30 ns
ManufacturerSTMicroelectronics
Minimum Operating Temperature- 55 C
RoHS Details
Rds On - Drain-Source Resistance900 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time65 ns
Factory Pack Quantity600
Package / CaseTO-247-3
BrandSTMicroelectronics
Maximum Operating Temperature+ 150 C
Width5.15 mm
Mounting StyleThrough Hole
PackagingTube
ImageSTMicroelectronics STW10NK80Z
SubcategoryMOSFETs
Qg - Gate Charge72 nC
Product CategoryMOSFET
DescriptionMOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
Product TypeMOSFET
SeriesSTW10NK80Z
Channel ModeEnhancement
Unit Weight1.340411 oz
Fall Time17 ns
Pd - Power Dissipation160 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time20 ns
TypeMOSFET