参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current62 A
Vgs - Gate-Source Voltage-
Typical Turn-On Delay Time13 ns
Width4.6 mm
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Height9.15 mm
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge34 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
PackagingTube
Minimum Operating Temperature- 55 C
Factory Pack Quantity1000
CNHTS8541210000
BrandSTMicroelectronics
Product TypeMOSFET
DescriptionMOSFET N-Ch Clamped 62 Amp
Channel ModeEnhancement
ImageSTMicroelectronics STP62NS04Z
SeriesSTP62NS04Z
TARIC8541210000
ManufacturerSTMicroelectronics
Fall Time42 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.050717 oz
SubcategoryMOSFETs
Pd - Power Dissipation110 W
USHTS8541290095
TradenameMESH OVERLAY
Vds - Drain-Source Breakdown Voltage33 V
Number of Channels1 Channel
Rise Time104 ns
TypeMOSFET