参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current7.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance850 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Width4.6 mm
Height9.15 mm
Length10.4 mm
Qg - Gate Charge32 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time22 ns
PackagingTube
ImageSTMicroelectronics STP9NK50Z
Unit Weight0.050717 oz
SeriesSTP9NK50Z
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation110 W
BrandSTMicroelectronics
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 500 Volt 7.2 A Zener SuperMESH
Vds - Drain-Source Breakdown Voltage500 V
TradenameSuperMESH
Number of Channels1 Channel
Rise Time20 ns
TypeMOSFET