参数项参数值
参数项参数值
DC Current Gain hFE Max200
Gain Bandwidth Product fT550 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current20 mA
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current20 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO4 V
DC Collector/Base Gain hfe Min40
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
TARIC8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandToshiba
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageToshiba 2SC2714-Y(TE85L,F)
Series2SC2714
Unit Weight0.000423 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerToshiba
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation100 mW
USHTS8541210095
DescriptionBipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V