参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.1 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance1.2 Ohms
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge8.7 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
SeriesIRFR/U
BrandVishay Semiconductors
RoHS Details
ImageVishay Semiconductors IRFR9110TRPBF
Product CategoryMOSFET
Unit Weight0.050717 oz
Factory Pack Quantity2000
SubcategoryMOSFETs
ManufacturerVishay
Product TypeMOSFET
Pd - Power Dissipation25 W
USHTS8541290095
DescriptionMOSFET 100V P-CH HEXFET MOSFET D
Number of Channels1 Channel