SI7850DP-T1-GE3

SI7850DP-T1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049859925

描述：MOSFET N-CH D-S 60V 8-SOIC

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min26 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current10.3 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541219000

JPHTS8541210101

Typical Turn-On Delay Time10 ns

Minimum Operating Temperature- 55 C

CAHTS8541210000

Rds On - Drain-Source Resistance22 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time25 ns

RoHS Details

Package / CasePowerPAK-SO-8

Factory Pack Quantity3000

ImageVishay Semiconductors SI7850DP-T1-GE3

Maximum Operating Temperature+ 150 C

PackagingMouseReel

PackagingReel

PackagingCut Tape

BrandVishay Semiconductors

Mounting StyleSMD/SMT

TARIC8541290000

ManufacturerVishay

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8

Qg - Gate Charge18 nC

MXHTS85412101

Product TypeMOSFET

SeriesSI7

USHTS8541210095

Channel ModeEnhancement

Unit Weight0.017870 oz

Fall Time12 ns

CNHTS8541290000

Part # AliasesSI7850DP-GE3

Pd - Power Dissipation4.5 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time10 ns

Moisture Sensitivity Level1 (Unlimited)