参数项参数值
参数项参数值
DC Current Gain hFE Max250 at - 150 mA, - 2 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 100 V
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min40 at - 150 mA, - 2 V
MXHTS85411001
KRHTS8541219000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541100901
Minimum Operating Temperature- 65 C
CAHTS8541100090
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541100000
Unit Weight7.336984 oz
RoHS Details
SeriesBCX53
Pd - Power Dissipation1 W
BrandDiodes Incorporated
ImageDiodes Incorporated BCX5316-13R
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity4000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541100080
DescriptionBipolar Transistors - BJT PNP Med PWR -1A 10 and 16 -500mV
Moisture Sensitivity Level1 (Unlimited)