参数项参数值
参数项参数值
DC Current Gain hFE Max250 at - 150 mA, - 2 V
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min63 at - 150 mA, - 2 V
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.004586 oz
RoHS Details
Pd - Power Dissipation500 mW
Part # Aliases933674730135
ImageNexperia BCX53-16,135
BrandNexperia
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors
USHTS8541290075
DescriptionBipolar Transistors - BJT Trans GP BJT PNP 80V 1A 4-Pin(3+Tab)
Moisture Sensitivity Level1 (Unlimited)