RH6L040BGTB1

RH6L040BGTB1

厂牌：Rohm Semiconductor

包装：Cut Tape (CT) 1

类目：--

编号：B000049863784

描述：MOSFET N-CH 60V 65A HSMT

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商品参数

参数项参数值

参数项参数值

PackagingTape & Reel (TR)

Package / Case8-PowerVDFN

Mounting TypeSurface Mount

Operating Temperature150°C (TJ)

TechnologyMOSFET (Metal Oxide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C40A (Tc)

Rds On (Max) @ Id, Vgs7.1mOhm @ 40A, 10V

FET Feature-

Power Dissipation (Max)59W (Tc)

Vgs(th) (Max) @ Id2.5V @ 1mA

Supplier Device Package8-HSMT (3.2x3)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Vgs (Max)±20V

Drain to Source Voltage (Vdss)60 V

Gate Charge (Qg) (Max) @ Vgs18.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds1320 pF @ 30 V

Moisture Sensitivity Level1 (Unlimited)