SI7145DP-T1-GE3

SI7145DP-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049872148

描述：MOSFET P-CH D-S 30V 8-SOIC

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min110 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.3 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current60 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Length6.15 mm

Height1.04 mm

Typical Turn-On Delay Time27 ns

Minimum Operating Temperature- 55 C

Rds On - Drain-Source Resistance2.1 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time130 ns

RoHS Details

Package / CasePowerPAK-SO-8

Factory Pack Quantity3000

ImageVishay Semiconductors SI7145DP-T1-GE3

PackagingReel

PackagingMouseReel

PackagingCut Tape

Width5.15 mm

BrandVishay Semiconductors

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

ManufacturerVishay

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET -30V Vds 20V Vgs PowerPAK SO-8

Qg - Gate Charge413 nC

Product TypeMOSFET

SeriesSI7

Channel ModeEnhancement

Unit Weight0.017870 oz

Fall Time27 ns

Part # AliasesSI7145DP-GE3

Pd - Power Dissipation104 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time13 ns

Moisture Sensitivity Level1 (Unlimited)