参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time11 ns
Width6.22 mm
Rds On - Drain-Source Resistance235 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Height2.3 mm
Length6.5 mm
Qg - Gate Charge25 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity2000
BrandInfineon / IR
ManufacturerInfineon
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 200V 1 N-CH HEXFET 235mOhms 25nC
ImageInfineon / IR IRFR13N20DTRPBF
Fall Time10 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time27 ns
TypeSmps MOSFET
Moisture Sensitivity Level1 (Unlimited)