参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current7.6 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5.8 ns
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time168.5 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseDFN-2020-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Qg - Gate Charge27 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP2023UFDF-7
Factory Pack Quantity3000
SeriesDMP2023
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 20V P-Ch Enh FET 8Vgss -7.6A ID 0.7W
Channel ModeEnhancement
Fall Time77.3 ns
USHTS8541210095
Unit Weight0.000238 oz
Pd - Power Dissipation730 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time19.3 ns