参数项参数值
参数项参数值
Forward Transconductance - Min32 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current57 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance23 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge130 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time47 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF3710STRLPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity800
Product TypeMOSFET
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 100V 57A 23mOhm 86.7nC
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel
Rise Time58 ns
Moisture Sensitivity Level1 (Unlimited)