参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO350 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max350 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.4 mm
Height1 mm
Length3.05 mm
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min15 at 100 mA, 10 V
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DN350T05-7
Factory Pack Quantity3000
SeriesDN350
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN BIPOLAR
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)