参数项参数值
参数项参数值
Forward Transconductance - Min200 ms
ConfigurationDual
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance800 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
Fall Time10 ns
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.000106 oz
ImageROHM Semiconductor EM6K7T2R
TARIC8541290000
Pd - Power Dissipation150 mW
RoHS Details
Part # AliasesEM6K7
Factory Pack Quantity8000
SeriesEM6K7
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Number of Channels2 Channel
DescriptionMOSFET TRNSISTR DUAL MOSFET
SubcategoryMOSFETs
Rise Time10 ns
USHTS8541290095