参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current- 800 mA
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width3.5 mm
Height1.6 mm
MXHTS85412999
Length6.5 mm
CNHTS8541290000
Collector-Emitter Saturation Voltage- 1.6 V
KRHTS8541299000
DC Collector/Base Gain hfe Min50
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DZT2907A-13
Factory Pack Quantity2500
SeriesDZT2907
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1W -60V
USHTS8541290095
Unit Weight0.003951 oz
Pd - Power Dissipation1500 mW