参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageVishay Semiconductors SI4164DY-T1-GE3
Rds On - Drain-Source Resistance3.2 mOhms
Maximum Operating Temperature+ 150 C
Package / CaseSO-8
PackagingReel
PackagingMouseReel
PackagingCut Tape
DescriptionMOSFET 30V Vds 20V Vgs SO-8
Mounting StyleSMD/SMT
BrandVishay Semiconductors
Factory Pack Quantity2500
Qg - Gate Charge95 nC
Product TypeMOSFET
ManufacturerVishay
RoHS Details
SeriesSI4
SubcategoryMOSFETs
Channel ModeEnhancement
Unit Weight0.006596 oz
Part # AliasesSI4164DY-GE3
Pd - Power Dissipation6 W
TradenameTrenchFET
Number of Channels1 Channel