参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 5 A
Collector- Emitter Voltage VCEO Max- 50 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Width2.48 mm
Height1.5 mm
MXHTS85412999
Length4.5 mm
CNHTS8541290000
Collector-Emitter Saturation Voltage- 390 mV
KRHTS8541299000
DC Collector/Base Gain hfe Min80 at - 3 A, - 2 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DPLS350Y-13
Factory Pack Quantity2500
SeriesDPLS350
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1000mW -50Vceo
USHTS8541290095
Pd - Power Dissipation1000 mW