SI4925DDY-T1-GE3

SI4925DDY-T1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049872612

描述：MOSFET P-CH DUAL 30V 8-SOICMOSFET -30V Vds 20V Vgs SO-8

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min23 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current8 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Height1.75 mm

Typical Turn-On Delay Time10 ns

Minimum Operating Temperature- 55 C

Rds On - Drain-Source Resistance29 mOhms

Transistor Type2 P-Channel

Typical Turn-Off Delay Time45 ns

Package / CaseSO-8

RoHS Details

Factory Pack Quantity2500

ImageVishay Semiconductors SI4925DDY-T1-GE3

PackagingReel

PackagingMouseReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

Width3.9 mm

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Product CategoryMOSFET

Qg - Gate Charge32 nC

SeriesSI4

Product TypeMOSFET

Channel ModeEnhancement

Unit Weight0.006596 oz

Fall Time12 ns

Part # AliasesSI4925DDY-GE3

Pd - Power Dissipation5 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels2 Channel

Rise Time8 ns

Moisture Sensitivity Level1 (Unlimited)