参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min1.5 S, 0.8 S
Vgs th - Gate-Source Threshold Voltage600 mV
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current700 mA, 500 mA
Vgs - Gate-Source Voltage- 12 V, + 12 V
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541290100
Typical Turn-On Delay Time16 ns, 15 ns
CAHTS8541290000
Rds On - Drain-Source Resistance390 mOhms, 850 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time22 ns, 12 ns
RoHS Details
Package / CaseSOT-363-6
ImageVishay Semiconductors SI1553CDL-T1-GE3
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
TARIC8541290000
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerVishay
DescriptionMOSFET -20V Vds 12V Vgs SC70-6 N&P PAIR
Qg - Gate Charge1.8 nC, 3 nC
MXHTS85412999
SeriesSI1
Product TypeMOSFET
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000988 oz
Fall Time13 ns, 8 ns
CNHTS8541210000
Part # AliasesSI1553DL-T1-GE3 SI1563DH-T1-GE3 SI1563EDH-T1-GE3 SI1555DL-T1-E3-S
Pd - Power Dissipation340 mW
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time22 ns, 15 ns