参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO160 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max140 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.4 mm
Collector-Emitter Saturation Voltage0.7 V
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
TARIC8541210000
RoHS Details
PackagingMouseReel
PackagingReel
PackagingCut Tape
SubcategoryTransistors
ImageDiodes Incorporated FMMT455TA
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SeriesFMMT45
USHTS8541290095
Unit Weight0.001058 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN High Voltage
Pd - Power Dissipation500 mW