参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.97 A
Transistor PolarityP-Channel
Length3.05 mm
Vgs - Gate-Source Voltage- 12 V, + 12 V
Height1.1 mm
KRHTS8541219000
PackagingReel
PackagingCut Tape
PackagingMouseReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
ManufacturerVishay
Rds On - Drain-Source Resistance100 MOhms
BrandVishay Semiconductors
CAHTS8541210000
Package / CaseTSOP-6
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width1.65 mm
Mounting StyleSMD/SMT
RoHS Details
ImageVishay Semiconductors SI3443CDV-T1-GE3
Qg - Gate Charge12.4 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET -20V Vds 12V Vgs TSOP-6
MXHTS85412101
Product TypeMOSFET
SeriesSI3
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000705 oz
CNHTS8541290000
Part # AliasesSI3443CDV-GE3
Pd - Power Dissipation3.2 W
TradenameTrenchFET
Number of Channels1 Channel