SI3585CDV-T1-GE3

SI3585CDV-T1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049872657

描述：MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR

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商品参数

参数项参数值

参数项参数值

ConfigurationDual

Forward Transconductance - Min1 S, 12 S

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Transistor PolarityN-Channel, P-Channel

Id - Continuous Drain Current2.1 A, 3.9 A

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Length3.05 mm

Height1.1 mm

JPHTS8541290100

Typical Turn-On Delay Time15 ns, 16 ns

CAHTS8541290000

Rds On - Drain-Source Resistance58 mOhms, 195 mOhms

Transistor Type1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time13 ns, 25 ns

RoHS Details

Package / CaseTSOP-6

ImageVishay Semiconductors SI3585CDV-T1-GE3

Factory Pack Quantity3000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

Width1.65 mm

TARIC8541290000

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

ManufacturerVishay

DescriptionMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR

Qg - Gate Charge3.2 nC, 6 nC

MXHTS85412999

SeriesSI3

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000705 oz

Fall Time9 ns, 28 ns

CNHTS8541290000

Part # AliasesSI3585CDV-GE3

Pd - Power Dissipation1.3 W, 1.4 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels2 Channel

Rise Time16 ns, 37 ns