参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412101
Length2.9 mm
Width1.3 mm
Height1 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage- 350 mV
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated DSS5240T-7
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT PNP 40V 2A
SeriesDSS52
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210075
Pd - Power Dissipation600 mW
Moisture Sensitivity Level1 (Unlimited)