参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current16 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 50 C
ImageVishay Semiconductors SI7716ADN-T1-GE3
Product CategoryMOSFET
Rds On - Drain-Source Resistance13.5 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-1212-8
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
PackagingCut Tape
PackagingReel
PackagingMouseReel
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
Factory Pack Quantity3000
Qg - Gate Charge23 nC
MXHTS85412999
Product TypeMOSFET
SeriesSI7
ManufacturerVishay
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.008410 oz
CNHTS8541290000
Part # AliasesSI7716ADN-GE3
Pd - Power Dissipation27.7 W
TradenameTrenchFET
Number of Channels1 Channel