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STD2HNK60Z
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049872754
描述：MOSFET N-CH 600V 2A DPAKMOSFET N Ch 600V Zener SuprMESH 4.4 A
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min1.5 S
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Length6.6 mm
Height2.4 mm
Typical Turn-On Delay Time10 ns
ImageSTMicroelectronics STD2HNK60Z
Product CategoryMOSFET
Rds On - Drain-Source Resistance4.8 Ohms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time23 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
DescriptionMOSFET N Ch 600V Zener SuprMESH 4.4 A
PackagingReel
PackagingCut Tape
PackagingMouseReel
Width6.2 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandSTMicroelectronics
Factory Pack Quantity2500
Qg - Gate Charge11 nC
MXHTS85412999
Product TypeMOSFET
SeriesSTD2HNK60Z
ManufacturerSTMicroelectronics
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time50 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation45 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time30 ns