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SI4160DY-T1-GE3

SI4160DY-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049872770
描述：MOSFET N-CH D-S 30V 8-SOIC
最新价格近期成交50单+
数量价格（含税）
1¥1.9889
100¥1.5333
1250¥1.3333
2500¥1.2554
库存：2,040交期：3-5Days起订：1增量：1
数量：
X
1.9889（单价）
合计：
￥1.99
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current25.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance4.9 mOhms
MXHTS85423999
Qg - Gate Charge54 nC
Mounting StyleSMD/SMT
Package / CaseSO-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Factory Pack Quantity2500
CNHTS8541210000
BrandVishay Semiconductors
ManufacturerVishay
SeriesSI4
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 30V Vds 20V Vgs SO-8
ImageVishay Semiconductors SI4160DY-T1-GE3
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.006596 oz
Part # AliasesSI4160DY-GE3
USHTS8542390001
Pd - Power Dissipation5.7 W
TradenameTrenchFET
Number of Channels1 Channel