参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current35 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Height1.04 mm
Length3.3 mm
JPHTS8541290100
Minimum Operating Temperature- 50 C
CAHTS8541290000
Rds On - Drain-Source Resistance20 mOhms
Package / CasePowerPAK-1212-8
RoHS Details
Factory Pack Quantity3000
ImageVishay Semiconductors SI7129DN-T1-GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Width3.3 mm
TARIC8541290000
ManufacturerVishay
BrandVishay Semiconductors
DescriptionMOSFET -30V Vds 20V Vgs PowerPAK 1212-8
SubcategoryMOSFETs
Product CategoryMOSFET
MXHTS85412999
SeriesSI7
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002592 oz
CNHTS8541290000
Part # AliasesSI7129DN-GE3
Pd - Power Dissipation52.1 W
TradenameTrenchFET
Number of Channels1 Channel