参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Minimum Operating Temperature- 55 C
KRHTS8541299000
Transistor PolarityN-Channel
Id - Continuous Drain Current8 A
JPHTS8541290100
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
ImageVishay Semiconductors SI4804CDY-T1-GE3
Height1.75 mm
Product CategoryMOSFET
Rds On - Drain-Source Resistance22 mOhms
DescriptionMOSFET 30V 8.0A 3.1W 22mohm @ 10V
Package / CaseSO-8
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity2500
Width3.9 mm
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandVishay Semiconductors
Qg - Gate Charge23 nC
ManufacturerVishay
MXHTS85412999
Product TypeMOSFET
SeriesSI4
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541290000
Part # AliasesSI4804CDY-GE3
Pd - Power Dissipation3.1 W
TradenameTrenchFET
Number of Channels2 Channel