参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current6.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
Typical Turn-On Delay Time25.1 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance32 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time141 ns
Package / CaseDFN-2020-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMP1022UFDF-7
PackagingReel
PackagingMouseReel
PackagingCut Tape
SubcategoryMOSFETs
Qg - Gate Charge48.3 nC
Product CategoryMOSFET
DescriptionMOSFET 12V P-Ch Enh Mode 19Vgs 2712pF 28.6nC
Product TypeMOSFET
MXHTS85412101
SeriesDMP10
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.687842 oz
Fall Time147 ns
CNHTS8541210000
Pd - Power Dissipation730 mW
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time39.8 ns