SI4425DDY-T1-GE3

SI4425DDY-T1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049872878

描述：MOSFET P-CH D-S 30V 8-SOIC

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min40 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current19.7 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

JPHTS8541290100

Typical Turn-On Delay Time12 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

Rds On - Drain-Source Resistance9.8 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time42 ns

Package / CaseSO-8

RoHS Details

Factory Pack Quantity2500

ImageVishay Semiconductors SI4425DDY-T1-GE3

PackagingReel

PackagingMouseReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

TARIC8541290000

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Product CategoryMOSFET

Qg - Gate Charge53 nC

MXHTS85412999

SeriesSI4

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.006596 oz

Fall Time9 ns

CNHTS8541290000

Part # AliasesSI4425DDY-GE3

Pd - Power Dissipation5.7 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time9 ns

Moisture Sensitivity Level1 (Unlimited)