STGWT60H65DFB

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000049872883

描述：STGWT60H65DFB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P

商品参数

参数项参数值

Collector- Emitter Voltage VCEO Max650 V

ConfigurationSingle

TechnologySi

Maximum Gate Emitter Voltage20 V

Collector-Emitter Saturation Voltage1.6 V

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Package / CaseTO-3P

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingTube

TARIC8541290000

ImageSTMicroelectronics STGWT60H65DFB

RoHS Details

Factory Pack Quantity300

ManufacturerSTMicroelectronics

Unit Weight0.238311 oz

BrandSTMicroelectronics

Product TypeIGBT Transistors

Continuous Collector Current at 25 C80 A

Product CategoryIGBT Transistors

DescriptionIGBT Transistors 650V 60A HSpd trench gate field-stop IGBT

SubcategoryIGBTs

Pd - Power Dissipation375 W

Continuous Collector Current Ic Max60 A

USHTS8541290095