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DMG1016V-7
厂牌：DIODES(美台)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000049872885
描述：MOSFET N+P 20V 870MA SOT563
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current870 mA, - 640 mA
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 6 V, + 6 V
Typical Turn-On Delay Time5.1 ns, 5.1 ns
Rds On - Drain-Source Resistance400 mOhms, 700 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time26.7 ns, 28.4 ns
Qg - Gate Charge736.6 pC, 622.4 pC
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Fall Time12.3 ns, 20.7 ns
ProductMOSFET Small Signal
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000106 oz
RoHS Details
SeriesDMG1016
Pd - Power Dissipation530 mW
BrandDiodes Incorporated
ImageDiodes Incorporated DMG1016V-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage20 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels2 Channel
Rise Time7.4 ns, 8.1 ns
DescriptionMOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563