在线商城 
SI7898DP-T1-GE3
厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049872911
描述：MOSFET N-CH 150V 3A PPAK 8SOICMOSFET 150V Vds 20V Vgs PowerPAK SO-8
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min15 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Transistor PolarityN-Channel
Id - Continuous Drain Current4.8 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time9 ns
ImageVishay Semiconductors SI7898DP-T1-GE3
Rds On - Drain-Source Resistance85 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-SO-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
DescriptionMOSFET 150V Vds 20V Vgs PowerPAK SO-8
Mounting StyleSMD/SMT
TARIC8541500000
Factory Pack Quantity3000
ManufacturerVishay
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge17 nC
MXHTS85412999
SubcategoryMOSFETs
RoHS Details
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Fall Time17 ns
Unit Weight0.017870 oz
CNHTS8541290000
Part # AliasesSI7898DP-GE3
Pd - Power Dissipation5 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time10 ns