参数项参数值
参数项参数值
Forward Transconductance - Min40 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time25 ns
Width4.6 mm
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Length10.4 mm
Height9.15 mm
MXHTS85412101
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
PackagingTube
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541210000
BrandSTMicroelectronics
SeriesSTP80NF55-08
ManufacturerSTMicroelectronics
Product CategoryMOSFET
TARIC8541210000
Channel ModeEnhancement
Factory Pack Quantity1000
RoHSIn Transition
Product TypeMOSFET
Fall Time25 ns
DescriptionMOSFET N-Ch 55 Volt 80 Amp
ImageSTMicroelectronics STP80NF55-08
Unit Weight0.011640 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation300 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time85 ns
TypeMOSFET