参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current7.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.8 ns
Width6.22 mm
Rds On - Drain-Source Resistance100 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27.5 ns
Length6.73 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge26 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity2500
BrandDiodes Incorporated
SeriesZXMN10
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET MOSFET N-CH 100V
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXMN10A09KTC
Product CategoryMOSFET
RoHS Details
Unit Weight0.139332 oz
SubcategoryMOSFETs
Pd - Power Dissipation10.1 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time5.3 ns
TypeMOSFET