参数项参数值
参数项参数值
Forward Transconductance - Min2.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance4.8 Ohms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time45 ns
Width4.6 mm
Height9.15 mm
Length10.4 mm
Qg - Gate Charge22.7 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time18 ns
PackagingTube
ImageSTMicroelectronics STP3NK90Z
Unit Weight0.050717 oz
SeriesSTP3NK90Z
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation90 W
BrandSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 900 Volt 3 Amp Zener SuperMESH
Vds - Drain-Source Breakdown Voltage900 V
TradenameSuperMESH
Number of Channels1 Channel
Rise Time7 ns
TypeMOSFET