参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current6 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time12 ns
ImageSTMicroelectronics STF8N80K5
Rds On - Drain-Source Resistance950 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5
Mounting StyleThrough Hole
TARIC8541290000
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge16.5 nC
MXHTS85412999
SubcategoryMOSFETs
RoHS Details
SeriesSTF8N80K5
USHTS8541290095
Channel ModeEnhancement
Fall Time20 ns
Unit Weight0.011640 oz
CNHTS8541210000
Pd - Power Dissipation25 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time14 ns